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Gain enhancement in a hybrid plasmonic nano-waveguide with a low-index or high-index gain medium
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.ORCID iD: 0000-0002-3401-1125
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.ORCID iD: 0000-0001-5967-2651
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2011 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 19, no 14, 12925-12936 p.Article in journal (Refereed) Published
Abstract [en]

A theoretical investigation of a nano-scale hybrid plasmonic waveguide with a low-index as well as high-index gain medium is presented. The present hybrid plasmonic waveguide structure consists of a Si substrate, a buffer layer, a high-index dielectric rib, a low-index cladding, a low-index nano-slot, and an inverted metal rib. Due to the field enhancement in the nano-slot region, a gain enhancement is observed, i.e., the ratio partial derivative G/partial derivative g > 1, where g and G are the gains of the gain medium and the TM fundamental mode of the hybrid plasmonic waveguide, respectively. For a hybrid plasmonic waveguide with a core width of w(co) = 30nm and a slot height of h(slot) = 50nm, the intrinsic loss could be compensated when using a low-index medium with a moderate gain of 176dB/cm. When introducing the high-index gain medium for the hybrid plasmonic waveguide, a higher gain is obtained by choosing a wider core width. For the high-index gain case with h(slot) = 50nm and w(co) = 500nm, a gain of about 200dB/cm also suffices for the compensation of the intrinsic loss.

Place, publisher, year, edition, pages
2011. Vol. 19, no 14, 12925-12936 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-38962DOI: 10.1364/OE.19.012925ISI: 000292876500053Scopus ID: 2-s2.0-79959905125OAI: oai:DiVA.org:kth-38962DiVA: diva2:438835
Funder
ICT - The Next Generation
Available from: 2011-09-05 Created: 2011-09-05 Last updated: 2017-12-08Bibliographically approved

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He, SailingWosinski, Lech

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Dai, DaoxinShi, YaochengHe, SailingWosinski, LechThylén, Lars
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Optics Express
Electrical Engineering, Electronic Engineering, Information Engineering

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