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Transient electromagnetically induced transparency in InGaAs quantum dots
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-4606-4865
2008 (English)In: 2008 Conference On Lasers And Electro-Optics & Quantum Electronics And Laser Science Conference: Vols 1-9, 2008, 3597-3598 p.Conference paper (Refereed)
Abstract [en]

Electromagnetically induced transparency (EIT) based on exciton spin transitions is observed in InGaAs quantum dots. Inhomogeneous broadening of the quantum dot ensemble, detrimental for EIT, is effectively reduced by using spectrally narrow pulses.

Place, publisher, year, edition, pages
2008. 3597-3598 p.
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-38753ISI: 000260498401794ScopusID: 2-s2.0-51349166645ISBN: 978-1-55752-859-9OAI: diva2:439268
Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008; San Jose, CA; 4 May 2008 through 9 May 2008
Available from: 2011-09-07 Created: 2011-08-31 Last updated: 2011-09-07Bibliographically approved

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