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Single-mode InGaAs/GaAs 1.3-mu m VCSELs Based on a Shallow Intracavity Patterning
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2010 (English)In: SEMICONDUCTOR LASERS AND LASER DYNAMICS IV / [ed] Panajotov, K; Sciamanna, M; Valle, AA; Michalzik, R, 2010, Vol. 7720, 772021- p.Conference paper (Refereed)
Abstract [en]

A high-power single-mode 1.3-mu m InGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) structure employing a novel concept of engineering the optical mode profile to match the gain profile is suggested and demonstrated experimentally and theoretically. In contrast to various singlemode VCSEL approaches reported in the literature so far, based on selective loss or anti-resonant effects to suppress higher order modes, it is due to a novel design to increase the active region size while maintaining single mode emission. The shape of the fundamental mode profile is engineered to be similar to the gain profile which resembles a doughnut shape especially in intra-cavity contacted devices. In this way, the fundamental mode with the best fit to the gain profile can reach the lasing condition earliest and consume all the optical gain, leading to a suppression of higher order modes. Notably, despite this engineered shape of the mode profile, the far field shape remains close to Gaussian. The mode shaping can be achieved by introducing a shallow intracavity patterning before depositing the top mirror. Fabricated device structures consist of a A-Si/SiN/SiO(2) top mirror, modulation-doped current spreading layers, re-grown current confinement layers, three InGaAs/GaAs quantum wells, and a GaAs/AlGaAs bottom mirror. Single mode operation is demonstrated even for devices with active region as large as 10 mu m.

Place, publisher, year, edition, pages
2010. Vol. 7720, 772021- p.
, Proceedings of SPIE-The International Society for Optical Engineering, ISSN 0277-786X ; 7720
Keyword [en]
Vertical-cavity surface-emitting lasers, long wavelength, singlemode emission
National Category
Computer and Information Science
URN: urn:nbn:se:kth:diva-39476DOI: 10.1117/12.854443ISI: 000285296800050ScopusID: 2-s2.0-77957877817ISBN: 978-0-8194-8193-1OAI: diva2:439855
Conference on Semiconductor Lasers and Laser Dynamics IV. Brussels, BELGIUM. APR 12-16, 2010
Available from: 2011-09-09 Created: 2011-09-09 Last updated: 2014-06-12Bibliographically approved
In thesis
1. Developments for Improved Performance Vertical-Cavity Surface Emitting Lasers
Open this publication in new window or tab >>Developments for Improved Performance Vertical-Cavity Surface Emitting Lasers
2014 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

The vertical-cavity surface-emitting laser (VCSEL) is a type of laser diode that emits light from the surface of the chip from which it is manufactured rather than from a cleaved edge as so far has been common for most telecommunication lasers. VCSEL’s low cost, high power efficiency and low power consumption properties make it a very attractive signal source for many applications such as fiber optical communication, optical interconnects, 3D sensing, absorption spectroscopy, laser printing, etc.

In this work, we have developed and evaluated new designs and technologies for extending the performance of VCSELs based on the GaAs material system. A novel scheme for single-mode emission from large size VCSELs, with active region size up to 10 μm, is proposed and discussed. Oxide-free designs of the VCSEL structure either based on an epitaxially regrown p-n-p layer or a buried tunnel junction (BTJ) for lateral current confinement are fabricated and characterized; the latter scheme yielding significant dynamic and static performance improvement as compared to epitaxially regrown design. In addition, the first room-temperature operation of a heterojunction bipolar transistor (HBT) 980nm VCSEL, a so-called transistor-VCSEL, is demonstrated. This novel three-terminal operational VCSEL is believed to have the potential for a ultrahigh modulation bandwidth due to altered carrier dynamics in the cavity region.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2014. 61 p.
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:11
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
urn:nbn:se:kth:diva-146641 (URN)978-91-7595-164-5 (ISBN)
2014-06-13, Sal/hall D, KTH-ICT, Isafjordgatan 39, Kista, 10:00 (English)

QC 20140612

Available from: 2014-06-12 Created: 2014-06-12 Last updated: 2014-06-13Bibliographically approved

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