GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 mu m intersubband absorption
2007 (English)In: Quantum Sensing and Nanophotonic Devices IV / [ed] Razeghi, M; Brown, GJ, 2007, Vol. 6479, 64791E-1-64791E-12 p.Conference paper (Refereed)
We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-mu m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.
Place, publisher, year, edition, pages
2007. Vol. 6479, 64791E-1-64791E-12 p.
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6479
GaN, AlN, multiple quantum well, MBE, intersubband, template
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-39120DOI: 10.1117/12.695457ISI: 000246393600024ScopusID: 2-s2.0-34248634306ISBN: 978-0-8194-6592-4OAI: oai:DiVA.org:kth-39120DiVA: diva2:439885
Quantum Sensing and Nanophotonic Devices IV; San Jose, CA; 22 January 2007 through 25 January 2007
QC 201109092011-09-092011-09-082016-05-09Bibliographically approved