Intersubband photonic devices by group-III nitrides
2007 (English)In: Optoelectronic Materials And Devices II / [ed] Nakano, Y, 2007, Vol. 6782, N7821-N7821 p.Conference paper (Refereed)
The characteristics of intersubband transitions in III-nitride quantum wells are promising for detectors and all-optical switches through a high intrinsic speed (similar to 1 THz), and can also provide a high optical saturation power and a desired small negative chirp parameter in electroabsorption modulators. The high LO-phonon energy allows to improve the operating temperature of THz emitters. Recent achievements and prospects for intersubband III-nitride photonic devices, mainly for lambda=1.55 mu m, are briefly reviewed. Further, means to enhance material quality by achieving crack-free growth of GaN/AlN multiple-quantum-well (MQW) structures, and by employing intersubband transitions in multiple-quantum-disk (MQD) structures incorporated into dislocation free GaN nanocolumns are discussed. We investigate the occurrence of cracks in MBE-grown GaN/AlN MQWs on GaN MOVPE templates with respect to the buffer layer, the number of QWs and the temperature reduction rate after growth. Intersubband absorption in GaN/AlN MQDs in the wavelength range 1.38-1.72 mu m is demonstrated in three samples grown on Si(111).
Place, publisher, year, edition, pages
2007. Vol. 6782, N7821-N7821 p.
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6782
intersubband transition, electroabsorption modulator, quantum well infrared photodetector (QWIP), alloptical switch, quantum cascade laser, GaN, AlN, GaN template, nanocolumn, molecular beam epitaxy
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-39116DOI: 10.1117/12.754372ISI: 000253358300051ScopusID: 2-s2.0-42549136075ISBN: 978-0-8194-6945-8OAI: oai:DiVA.org:kth-39116DiVA: diva2:439956
Optoelectronic Materials and Devices II; Wuhan; 2 November 2007 through 5 November 2007