Tunneling spectroscopy of magnetic double barrier junctions
2007 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 43, no 6, 2818-2820 p.Article in journal (Refereed) Published
Scanning tunneling microscopy (STM) is used to study transport in magnetic double tunnel junctions (DTJs) formed using a fixed transparency barrier of a patterned tunnel junction (TJ), and a variable tunnel barrier between the top electrode of the patterned junction and the STM tip. A sufficiently thin top electrode has been predicted to result in a rectification of charge current through a DTJ when the two barriers have different transparency. Our measurements indeed show a high current rectification ratio for 3-nm-thick, continuous film top electrodes, which is observed for junctions with asymmetric tunnel barriers.
Place, publisher, year, edition, pages
2007. Vol. 43, no 6, 2818-2820 p.
current rectification, diode effect, magnetic tunnel junctions (MTJs), tunneling spectroscopy
IdentifiersURN: urn:nbn:se:kth:diva-39451DOI: 10.1109/TMAG.2007.893313ISI: 000246706200242ScopusID: 2-s2.0-34249058694OAI: oai:DiVA.org:kth-39451DiVA: diva2:440069
Conference: 10th Joint Magnetism and Magnetic Materials Conference/International Magnetics Conference. Balitmore, MD. JAN 07-11, 2007. QC 201109112011-09-122011-09-092012-03-13Bibliographically approved