Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In(2)O(3)
2007 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, no 9, 09N513- p.Article in journal (Refereed) Published
Indium oxide is chosen as the host material for doping Ti, V, and Cr transition metal ions. Theoretical calculations based on density functional theory within a local spin density approximation show that V-V separation of 5.6 A is more stable with a strong ferromagnetic coupling. Our calculations clearly predict that substitution of vanadium for indium should yield ferromagnetism in In(2)O(3). Experimentally, (In(0.95)TM(0.05))O(3) (TM=Ti,V,Cr) were prepared using sol-gel as well as solid state reaction methods. Superconducting quantum interference device magnetization measurements as a function of field and temperature clearly showed that the V and Cr doped samples are ferromagnetic with Curie temperature well above room temperature. Thin films deposited by pulsed laser ablation using these materials on sapphire substrates exhibit a preferred 222 orientation normal to the plane of the film. The magnetic moment for (In(0.95)V(0.05))O(3) film deposited in 0.1 mbar oxygen pressure was estimated to be 1.7 mu(B)/V and is comparable to the theoretical value of 2 mu(B)/V.
Place, publisher, year, edition, pages
2007. Vol. 101, no 9, 09N513- p.
IdentifiersURN: urn:nbn:se:kth:diva-39447DOI: 10.1063/1.2712018ISI: 000246567900458ScopusID: 2-s2.0-34248524695OAI: oai:DiVA.org:kth-39447DiVA: diva2:440098
Conference: 10th Joint Magnetism and Magnetic Materials Conference/International Magnetics Conference. Baltimore, MD. JAN 07-11, 2007 2011-09-122011-09-092011-09-12Bibliographically approved