Analysis of the base current and saturation voltage in 4H-SiC power BJTs
2007 (English)In: 2007 European Conference On Power Electronics And Applications: Vols 1-10, 2007, 2744-2750 p.Conference paper (Refereed)
Silicon carbide (SiC) power bipolar junction transistors are interesting competitors to Si IGBTs for 1200 V power electronics applications. Advantages of SiC BJTs are low collector-emitter saturation voltages, little stored charge and high temperature capability. In this work, SiC NPN power BJTs with common emitter current gains of 40 have been fabricated and characterized. Electrical measurements for BJTs with different emitter widths indicate that the current gain is limited by surface recombination. A low value of V-CESAT=0.9 V at J(C)=100 A/cm(2) was obtained for small and large area (3.4 mm(2)) BJTs and correlated with the formation of low-resistive ohmic contacts to the base. Large area BJTs were shown to operate with a current gain of 48 in pulsed mode at a collector current of 12 A corresponding to J(C)=360 A/cm(2).
Place, publisher, year, edition, pages
2007. 2744-2750 p.
silicon carbide, device modelling, transistor, bipolar device
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-39647DOI: 10.1109/EPE.2007.4417568ISI: 000255993601125ScopusID: 2-s2.0-51049112923ISBN: 978-90-75815-11-5OAI: oai:DiVA.org:kth-39647DiVA: diva2:440282
2007 European Conference on Power Electronics and Applications, EPE; Aalborg; 2 September 2007 through 5 September 2007