Influence of dislocations on low frequency noise in nMOSFETs fabricated on tensile strained virtual substrates
2007 (English)In: Noise and Fluctuations / [ed] Tacano, M; Yamamoto, Y; Nakao, M, 2007, Vol. 922, 133-136 p.Conference paper (Refereed)
In this work sSi nMOSFETs with 13 run sSi thickness on 27% Ge virtual substrates (VS) are investigated and an increased LF noise level with a characteristic gate bias dependence is found. High off-state leakage of the MOSFETs indicates the presence of misfit dislocations in the channel region. A channel conductance based model is proposed to analyse the noise originating from a highly localized defect in the channel.
Place, publisher, year, edition, pages
2007. Vol. 922, 133-136 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 922
1/f noise, low-frequency noise, strained silicon, virtual substrate, dislocation
Computer and Information Science Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-39633DOI: 10.1063/1.2759652ISI: 000249049500027ScopusID: 2-s2.0-76049106756ISBN: 978-0-7354-0432-8OAI: oai:DiVA.org:kth-39633DiVA: diva2:440535
19th International Conference on Noise and Fluctuations, ICNF2007; Tokyo; 9 September 2007 through 14 September 2007