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Influence of dislocations on low frequency noise in nMOSFETs fabricated on tensile strained virtual substrates
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2007 (English)In: Noise and Fluctuations / [ed] Tacano, M; Yamamoto, Y; Nakao, M, 2007, Vol. 922, 133-136 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this work sSi nMOSFETs with 13 run sSi thickness on 27% Ge virtual substrates (VS) are investigated and an increased LF noise level with a characteristic gate bias dependence is found. High off-state leakage of the MOSFETs indicates the presence of misfit dislocations in the channel region. A channel conductance based model is proposed to analyse the noise originating from a highly localized defect in the channel.

Place, publisher, year, edition, pages
2007. Vol. 922, 133-136 p.
Series
AIP Conference Proceedings, ISSN 0094-243X ; 922
Keyword [en]
1/f noise, low-frequency noise, strained silicon, virtual substrate, dislocation
National Category
Computer and Information Sciences Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-39633DOI: 10.1063/1.2759652ISI: 000249049500027Scopus ID: 2-s2.0-76049106756ISBN: 978-0-7354-0432-8 (print)OAI: oai:DiVA.org:kth-39633DiVA: diva2:440535
Conference
19th International Conference on Noise and Fluctuations, ICNF2007; Tokyo; 9 September 2007 through 14 September 2007
Available from: 2011-09-13 Created: 2011-09-12 Last updated: 2018-01-12Bibliographically approved

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Malm, Bengt Gunnar

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CiteExportLink to record
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Citation style
  • apa
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  • vancouver
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Language
  • de-DE
  • en-GB
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  • fi-FI
  • nn-NO
  • nn-NB
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  • Other locale
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Output format
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