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Simultaneous study of nickel based ohmic contacts to Si-face and C-face of n-type silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2007 (English)In: 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, NEW YORK: IEEE , 2007, 311-311 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2007. 311-311 p.
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Physical Sciences
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URN: urn:nbn:se:kth:diva-39393DOI: 10.1109/ISDRS.2007.4422387ISI: 000255857100159Scopus ID: 2-s2.0-44949219353ISBN: 978-1-4244-1891-6 (print)OAI: oai:DiVA.org:kth-39393DiVA: diva2:440667
Conference
International Semiconductor Device Research Symposium. College Pk, MD. DEC 12-14, 2007
Available from: 2011-09-13 Created: 2011-09-09 Last updated: 2011-09-13Bibliographically approved

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Zetterling, Carl-Mikael

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Ghandi, RezaLee, Hyung-SeokDomeij, MartinZetterling, Carl-MikaelOstling, Mikael
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