Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress
Show others and affiliations
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 96, no 6, 3158-3163 p.Article in journal (Refereed) Published
Abstract [en]

Si1-xGex/Si1-yGey/Si(100) heterostructures grown by molecular beam epitaxy were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B segregation during growth shows that (i) for layers in epitaxy on (100)Si, B segregation decreases with increasing Ge concentration, i.e., with increased compressive stress; (ii) for unstressed layers, B segregation increases with Ge concentration; (iii) at constant Ge concentration, B segregation increases for layers in tension and decreases for layers in compression. The contrasting behaviors observed as a function of Ge concentration in compressively stressed and unstressed layers can be explained by an increase of the equilibrium segregation driving force induced by Ge additions and an increase of near-surface diffusion in compressively stressed layers. Analysis of lattice diffusion shows that (i) in unstressed layers, B lattice diffusion coefficient decreases with increasing Ge concentration; (ii) at constant Ge concentration, the diffusion coefficient of B decreases with compressive biaxial stress and increases with tensile biaxial stress; (iii) the volume of activation of B diffusion [DeltaV=-kT(d ln D/dP)] is positive for biaxial stress while it is negative in the case of hydrostatic pressure. This confirms that under a biaxial stress the activation volume is reduced to the relaxation volume.

Place, publisher, year, edition, pages
2004. Vol. 96, no 6, 3158-3163 p.
Keyword [en]
Boron, Compressive stress, Concentration (process), Crystal growth, Crystal lattices, Diffusion in solids, Germanium, Heterojunctions, Hydrostatic pressure, Molecular beam epitaxy, Segregation (metallography), Surface properties, Tensile testing
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-40573DOI: 10.1063/1.1781767ISI: 000223720000016Scopus ID: 2-s2.0-4944229207OAI: oai:DiVA.org:kth-40573DiVA: diva2:441526
Note
QC 20110916Available from: 2011-09-16 Created: 2011-09-16 Last updated: 2017-12-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Christensen, JensSvensson, Bengt
By organisation
ElectronicsMicroelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 58 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf