Challenges regarding parallel-connection of SiC JFETs
2011 (English)In: IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE & ECCE), 2011: 'Green World with Power Electronics' / [ed] IEEE, 2011, 1095-1101 p.Conference paper (Refereed)
Considering the present development of the available Silicon Carbide switches, their current ratings are so low that they cannot be used for high-power converters. It is therefore necessary to connect several switches in parallel in order to obtain sufficient current ratings. An investigation of parallel-connected normally-on Silicon Carbide Junction Field Effect Transistors is presented in this paper. The parameters that play the most important role for the parallel connection are the pinch-off and the gate-source breakdown voltages. The temperature dependency of those two voltages is analyzed based on the pnp structure of the device. If the spread in these parameters is sufficiently large there might be no possibility for a stable off-state operation of a pair of transistors without forcing one of the gate voltages to exceed the breakdown voltage, especially at high temperatures. A solution to this problem is given. The switching performance of two pairs of parallel-connected devices is compared with respect to their pinch-off voltages, and it is found that differences of approximately 25% in switching losses could result from a difference in the pinch-off voltage of 0.5 V.
Place, publisher, year, edition, pages
2011. 1095-1101 p.
Electric breakdown, Electric connectors, Heterojunctions, Overcurrent protection, Power electronics, Silicon carbide
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-40605DOI: 10.1109/ICPE.2011.5944660ScopusID: 2-s2.0-80052078726ISBN: 978-161284956-0OAI: oai:DiVA.org:kth-40605DiVA: diva2:441656
QC 201109302011-09-172011-09-172013-05-27Bibliographically approved