High-power modular multilevel converters with SiC JFETs
2010 (English)In: 2010 IEEE Energy Conversion Congress and Exposition (ECCE) / [ed] IEEE, IEEE , 2010, 2148-2155 p.Conference paper (Refereed)
This paper studies the possibility of building a Modular Multilevel Converter (M2C) using Silicon Carbide (SiC) switches. The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon insulated gate bipolar transistors. Both SiC BJTs and JFETs are considered and compared in order to choose the most suitable technology. One of the sub-modules of a down-scaled 10 kVA prototype M2C is replaced with a sub-module with SiC JFETs without anti-parallel diodes. It is shown that diode-less operation is possible with the JFETs conducting in the negative direction, leaving the possibility to use the body diode during the switching transients. Experimental waveforms for the SiC sub-module verify the feasibility during normal steady-state operation. The loss estimation shows that a 300 MW M2C for high-voltage direct current transmission would potentially have an efficiency of approximately 99,8 % if equipped with future 3.3 kV 1.2 kA SiC JFETs.
Place, publisher, year, edition, pages
IEEE , 2010. 2148-2155 p.
Diode-less operation, High Voltage Direct-Current Transmission, Modular Multilevel Converter, SiC JFETs, Silicon Carbide
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-40608DOI: 10.1109/ECCE.2010.5618274ScopusID: 2-s2.0-78650133596ISBN: 978-1-4244-5286-6OAI: oai:DiVA.org:kth-40608DiVA: diva2:441659
QC 201110052011-09-172011-09-172011-10-05Bibliographically approved