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Electrical parameters in highly doped strained n-Si1-xGex epilayers grown on Si substrates
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 48, no 10-11, 2095-2098 p.Article in journal (Refereed) Published
Abstract [en]

Electrical resistivity and Hall coefficient measurements have been realized on strained highly doped single n-Si1-xGex epilayers grown on Si substrates in the temperature range 80-350 K. Free electron concentration and Hall mobility were determined. Conduction band parameters and high mobility results were discussed taking into account the strain induced conduction band modification.

Place, publisher, year, edition, pages
2004. Vol. 48, no 10-11, 2095-2098 p.
Keyword [en]
SiGe, mobility, Hall effect, strained heterostructures, conduction band splitting
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-40508DOI: 10.1016/j.sse.2004.05.065ISI: 000223809700072Scopus ID: 2-s2.0-3142664156OAI: oai:DiVA.org:kth-40508DiVA: diva2:442683
Note
QC 20110922. International Semiconductor Device Reseaech Symposium (ISDRS 03). Washington, DC. DEC 10-12, 2003 Available from: 2011-09-22 Created: 2011-09-16 Last updated: 2017-12-08Bibliographically approved

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