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High boron incorporation in selective epitaxial growth of SiGe layers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2007 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 18, no 7, 747-751 p.Article in journal (Refereed) Published
Abstract [en]

Incorporation of high amount of boron in the range of 1 x 10(20)-1 x 10(21) cm(-3) in selective epitaxial growth (SEG) of Si1-xGex (x = 0.15-0.315) layers for recessed or elevated source/drain junctions in CMOS has been studied. The effect of high boron doping on growth rate, Ge content and appearance of defect in the epi-layers was investigated. In this study, integration issues were oriented towards having high layer quality whereas still high amount of boron is implemented and the selectivity of the epitaxy is preserved.

Place, publisher, year, edition, pages
2007. Vol. 18, no 7, 747-751 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-40736DOI: 10.1007/s10854-007-9121-zISI: 000246175200013Scopus ID: 2-s2.0-34247859043OAI: oai:DiVA.org:kth-40736DiVA: diva2:443029
Note
2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices Location: Kalives, Greece, Date: SEP 08-11, 2006Available from: 2011-09-23 Created: 2011-09-20 Last updated: 2017-12-08Bibliographically approved

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Ghandi, RezaKolahdouz, MohammadrezaHållstedt, JuliusÖstling, MikaelRadamson, Henry H.
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