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Calculation of lattice heating in SiC RF power devices
KTH, Superseded Departments, Electrum Laboratory.
2004 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 48, no 12, 2103-2107 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide MESFET devices are suitable for high-speed and high-power applications. In this paper we are studying thermal effects in 4H-SiC RF power devices. The simulations are based on a combination of 2D device simulations for the electrical transport, and 3D thermal simulations for the lattice heating. We show that the method gives good accuracy, efficiency, flexibility and capacity dealing with tasks, where a 2D coupled electrical-thermal simulation is not sufficient. We also present an improvement of Roschke and Schwierz mobility model, based on Monte Carlo simulations for the temperature dependencies of the mobility parameters beta and v(sat).

Place, publisher, year, edition, pages
2004. Vol. 48, no 12, 2103-2107 p.
Keyword [en]
SiC, MESFET, thermal effects, device modeling
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-39741DOI: 10.1016/j.sse.2004.08.001ISI: 000224520600001Scopus ID: 2-s2.0-4544340583OAI: oai:DiVA.org:kth-39741DiVA: diva2:443711
Note
QC 20110926Available from: 2011-09-26 Created: 2011-09-12 Last updated: 2017-12-08Bibliographically approved

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