Silicon carbide devices and processes - Present status and future perspective
2006 (English)In: Proceedings of the International Conference Mixed Design of Integrated Circuits and Systems / [ed] Napieralski, A, 2006, 34-42 p.Conference paper (Refereed)
Silicon carbide electronic devices are already commercially available in a few application areas such as high voltage rectifiers and emerging rf power amplifiers. Over the past 15 years a very rapid progress of both materials and device quality has been seen and is very encouraging for the near future application market. Prototype devices show amazing improvement each year in all device categories as well as a markedly improved wafer quality. However, materials defect issues are still limiting economically viable production of large area devices with high yield. In this paper a thorough review of progress in SiC device process technology and presents the state-of-the art SiC devices as well as new application areas such as ferroelectric field effect transistors.
Place, publisher, year, edition, pages
2006. 34-42 p.
silicon carbide, micropipe, Ohmic contact, power devices, bipolar transistor, schottky diode, JFET, RF power
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-41760DOI: 10.1109/MIXDES.2006.1706532ISI: 000240025100003ScopusID: 2-s2.0-39749119819ISBN: 83-922632-1-9OAI: oai:DiVA.org:kth-41760DiVA: diva2:444972
International Conference on Mixed Design of Integrated Circuits and Systems Location: Gdynia, Poland, Date: JUN 22-24, 2006
QC 201109302011-09-302011-09-302011-09-30Bibliographically approved