Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Silicon carbide devices and processes - Present status and future perspective
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0001-8108-2631
2006 (English)In: Proceedings of the International Conference Mixed Design of Integrated Circuits and Systems / [ed] Napieralski, A, 2006, 34-42 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide electronic devices are already commercially available in a few application areas such as high voltage rectifiers and emerging rf power amplifiers. Over the past 15 years a very rapid progress of both materials and device quality has been seen and is very encouraging for the near future application market. Prototype devices show amazing improvement each year in all device categories as well as a markedly improved wafer quality. However, materials defect issues are still limiting economically viable production of large area devices with high yield. In this paper a thorough review of progress in SiC device process technology and presents the state-of-the art SiC devices as well as new application areas such as ferroelectric field effect transistors.

Place, publisher, year, edition, pages
2006. 34-42 p.
Keyword [en]
silicon carbide, micropipe, Ohmic contact, power devices, bipolar transistor, schottky diode, JFET, RF power
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-41760DOI: 10.1109/MIXDES.2006.1706532ISI: 000240025100003Scopus ID: 2-s2.0-39749119819ISBN: 83-922632-1-9 (print)OAI: oai:DiVA.org:kth-41760DiVA: diva2:444972
Conference
International Conference on Mixed Design of Integrated Circuits and Systems Location: Gdynia, Poland, Date: JUN 22-24, 2006
Note
QC 20110930Available from: 2011-09-30 Created: 2011-09-30 Last updated: 2011-09-30Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Zetterling, Carl Mikael

Search in DiVA

By author/editor
Östling, MikaelLee, Hyung-SeokDomeij, MartinZetterling, Carl Mikael
By organisation
Microelectronics and Applied Physics, MAP
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 79 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf