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Ion implantation processing and related effects in SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2006 (English)In: Silicon Carbide and Related Materials 2005, Pts 1 and 2 / [ed] Devaty, RP, 2006, Vol. 527-529, 781-786 p.Conference paper, Published paper (Refereed)
Abstract [en]

A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p(+)-doped layers, and deactivation of N donors by ion-induced defects.

Place, publisher, year, edition, pages
2006. Vol. 527-529, 781-786 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 527-529
Keyword [en]
implantation, profile simulation, doping, ion flux, dynamic annealing
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-41668ISI: 000244227200184Scopus ID: 2-s2.0-33845604723ISBN: 978-087849425-5 (print)OAI: oai:DiVA.org:kth-41668DiVA: diva2:445297
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) Location: Pittsburgh, PA Date: SEP 18-23, 2005
Note
QC 20111003Available from: 2011-10-03 Created: 2011-09-30 Last updated: 2011-10-03Bibliographically approved

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Hallén, AndersLinnarsson, Margareta

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