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Vacancy-impurity pairs in n-type Si1-xGex studied by positron spectroscopy
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
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2006 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 376, 208-211 p.Article in journal (Refereed) Published
Abstract [en]

Positron annihilation spectroscopy was applied to study relaxed P-doped n-type Si1-xGex layers with Ge concentrations up to 30%. As-grown SiGe layers were defect-free and annihilations are superpositions from bulk Si and Ge. Proton irradiation at 2 MeV energy with a 1.6 x 10(15) cm(-2) fluence was used to produce saturated positron trapping in monovacancy related defects. The defects were identified as V-P pairs, the E-center. The distribution of Si and Ge atoms surrounding the E-center is the same as in the host lattice. The vacancy migration process leading to the formation of V-P pairs therefore does not seem to have a preference for either Si or Ge atoms. (c) 2005 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 376, 208-211 p.
Keyword [en]
SiGe, relaxed, defects, positron spectroscopy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-41604DOI: 10.1016/j.physb.2005.12.055ISI: 000237329500052Scopus ID: 2-s2.0-33645135220OAI: oai:DiVA.org:kth-41604DiVA: diva2:445444
Note
QC 20111003. Conference: 23rd International Conference on Defects in Semiconductors. Awaji Isl, JAPAN. JUL 24-29, 2005Available from: 2011-10-04 Created: 2011-09-29 Last updated: 2017-12-08Bibliographically approved

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