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Metal nano-floating gate memory devices fabricated at low temperature
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2006 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 83, no 4-9, 1563-1566 p.Article in journal (Refereed) Published
Abstract [en]

In this communication, we report on the realization of low-temperature processed Electrically Erasable Programmable Read-Only Memory (EEPROM) like device with embedded gold nanoparticles. The realization is based on the fabrication of a V-groove SiGe Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir-Blodgett (LB) technique. Such structures were processed at a temperature lower than 400 degrees C. The electrical characteristics of the final hybrid Metal Insulator Semiconductor FET (MISFET) memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented.

Place, publisher, year, edition, pages
2006. Vol. 83, no 4-9, 1563-1566 p.
Keyword [en]
nanoparticles, SiGe, memory, wafer bonding, Langmuir-Blodgett deposition, hybrid electronics
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-41601DOI: 10.1016/j.mee.2006.01.235ISI: 000237581900228Scopus ID: 2-s2.0-33646509445OAI: oai:DiVA.org:kth-41601DiVA: diva2:445453
Note

QC 20111004. Conference: 31st International Conference on Micro- and Nano-Engineerin. Vienna, AUSTRIA Date: SEP 19-22, 2005

Available from: 2011-10-04 Created: 2011-09-29 Last updated: 2017-12-08Bibliographically approved

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