Investigation of structural stability in 4H-SiC structures with heavy ion implanted interface
2006 (English)In: Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, Vol. 527-529, 395-398 p.Conference paper (Refereed)
We investigate the possibility of controlling formation of stacking faults (SFs) at the interface region by implanting the 4H-SiC substrate with low-energy antimony ions (75 keV Sb+) prior to conventional CVD growth of the homoepitaxial layers. This approach is based on the solidsolution hardening concept, according to which interaction of impurity atoms with dislocations makes the motion of the latter more difficult. Photoluminescence imaging spectroscopy is employed to investigate incorporation of Sb+ implants at the buried interface and also to assess its impact on structural degradation. Spectral results are analyzed considering both the onset of n-type doping and irradiation damage. The latter factor was estimated separately from supplementary measurements of high-energy (2.5 MeV H+) proton-irradiated 4H-SiC epilayers. We compare results of optically stimulated SF formation in virgin and Sb implanted regions and provide a comprehensive picture of the defect evolution, including microscopic details of the imminent nucleation sites.
Place, publisher, year, edition, pages
2006. Vol. 527-529, 395-398 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 527-529
stacking faults, luminescence, imaging spectroscopy, antimony, implantation, defects
IdentifiersURN: urn:nbn:se:kth:diva-41970ISI: 000244227200092ScopusID: 2-s2.0-37849031490ISBN: 978-087849425-5OAI: oai:DiVA.org:kth-41970DiVA: diva2:445614
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005)
QC 201110042011-10-042011-10-042011-10-04Bibliographically approved