In-diffusion, trapping and out-diffusion of deuterium in 4H-SiC substrates
2006 (English)In: Silicon Carbide and Related Materials 2005, Pts 1 and 2 / [ed] Devaty, RP, 2006, Vol. 527-529, 637-640 p.Conference paper (Refereed)
Incorporation of hydrogen/deuterium in n-, p-type, and semi-insulating 4H-SiC substrates during epitaxial growth at 1590 degrees C has been studied in detail by secondary ion mass spectrometry. Out-diffusion has been investigated in samples subsequently annealed at high temperatures. After the epitaxial growth, deuterium is detected throughout the entire substrates. Out-diffusion can be observed after anneals at 1300 degrees C, but traces of deuterium can still be found in samples annealed as high as 1700 degrees C. A trap limited diffusion mechanism is proposed with vacancy related hydrogen trapping centers in n-type and semi insulating 4H-SiC substrates.
Place, publisher, year, edition, pages
2006. Vol. 527-529, 637-640 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476
deuterium, SIMS, diffusion
IdentifiersURN: urn:nbn:se:kth:diva-41971ISI: 000244227200151ScopusID: 2-s2.0-37849028264ISBN: 978-087849425-5OAI: oai:DiVA.org:kth-41971DiVA: diva2:445620
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). Pittsburgh, PA. SEP 18-23, 2005
QC 201110042011-10-042011-10-042011-10-04Bibliographically approved