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In-diffusion, trapping and out-diffusion of deuterium in 4H-SiC substrates
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2006 (English)In: Silicon Carbide and Related Materials 2005, Pts 1 and 2 / [ed] Devaty, RP, 2006, Vol. 527-529, 637-640 p.Conference paper, Published paper (Refereed)
Abstract [en]

Incorporation of hydrogen/deuterium in n-, p-type, and semi-insulating 4H-SiC substrates during epitaxial growth at 1590 degrees C has been studied in detail by secondary ion mass spectrometry. Out-diffusion has been investigated in samples subsequently annealed at high temperatures. After the epitaxial growth, deuterium is detected throughout the entire substrates. Out-diffusion can be observed after anneals at 1300 degrees C, but traces of deuterium can still be found in samples annealed as high as 1700 degrees C. A trap limited diffusion mechanism is proposed with vacancy related hydrogen trapping centers in n-type and semi insulating 4H-SiC substrates.

Place, publisher, year, edition, pages
2006. Vol. 527-529, 637-640 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476
Keyword [en]
deuterium, SIMS, diffusion
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-41971ISI: 000244227200151Scopus ID: 2-s2.0-37849028264ISBN: 978-087849425-5 (print)OAI: oai:DiVA.org:kth-41971DiVA: diva2:445620
Conference
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). Pittsburgh, PA. SEP 18-23, 2005
Note
QC 20111004Available from: 2011-10-04 Created: 2011-10-04 Last updated: 2011-10-04Bibliographically approved

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Linnarsson, Margareta

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Output format
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