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Current gain dependence on emitter width in 4H-SiC BJTs
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
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2006 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 527-529, 1425-1428 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain beta = 64 and a breakdown voltage of 1100 V. The high beta value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This "emitter-size" effect is in good agreement with device simulations including recombination in interface states at the etched termination of the base-emitter junction.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2006. Vol. 527-529, 1425-1428 p.
Keyword [en]
bipolar junction transistor, surface recombination, emitter-size effect, current gain, device simulation
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-41969ISI: 000244227200337Scopus ID: 2-s2.0-37849033492ISBN: 978-087849425-5 (print)OAI: oai:DiVA.org:kth-41969DiVA: diva2:445634
Conference
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). Pittsburgh, PA. SEP 18-23, 2005
Note
QC 20111004Available from: 2011-10-04 Created: 2011-10-04 Last updated: 2017-12-08Bibliographically approved

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Zetterling, Carl-Mikael

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