Current gain dependence on emitter width in 4H-SiC BJTs
2006 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 527-529, 1425-1428 p.Article in journal (Refereed) Published
This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain beta = 64 and a breakdown voltage of 1100 V. The high beta value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This "emitter-size" effect is in good agreement with device simulations including recombination in interface states at the etched termination of the base-emitter junction.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2006. Vol. 527-529, 1425-1428 p.
bipolar junction transistor, surface recombination, emitter-size effect, current gain, device simulation
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-41969ISI: 000244227200337ScopusID: 2-s2.0-37849033492ISBN: 978-087849425-5OAI: oai:DiVA.org:kth-41969DiVA: diva2:445634
Conference: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). Pittsburgh, PA. SEP 18-23, 2005
QC 201110042011-10-042011-10-042012-03-21Bibliographically approved