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Heteroepitaxy and selective epitaxy for discrete and integrated devices
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.ORCID iD: 0000-0002-0977-2598
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
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2006 (English)In: 2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, NEW YORK: IEEE , 2006, 309-311 p.Conference paper, Published paper (Refereed)
Abstract [en]

We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for Optical Code Division Multiplex Access (OCDMA) networking applications.

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2006. 309-311 p.
Keyword [en]
heteroepitaxy, selective epitaxy, nanopillars, hydride vapour phase epitaxy, OCDAM devices
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-42042DOI: 10.1109/COMMAD.2006.4429944ISI: 000255327100041Scopus ID: 2-s2.0-44849084865ISBN: 978-1-4244-0577-0 (print)OAI: oai:DiVA.org:kth-42042DiVA: diva2:446427
Conference
2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006; Perth; 6 December 2006 through 8 December 2006
Note
QC 20111007Available from: 2011-10-07 Created: 2011-10-05 Last updated: 2012-03-20Bibliographically approved

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Lourdudoss, Sebastian

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Lourdudoss, SebastianOlsson, FredrikHakkarainen, TeppoBerrier, AudreyAnand, SrinivasanAubert, AmandineBerggren, Jesper
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Microelectronics and Information Technology, IMITElectrum Laboratory, ELAB
Atom and Molecular Physics and Optics

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CiteExportLink to record
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