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Neutron irradiation and annealing recovery in the AlPdRe quasicrystal
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2006 (English)In: Low Temperature Physics, Pts A and B / [ed] Takano, Y; Hershfield, SP; Hirschfeld, PJ; Goldman, AM, MELVILLE, NY: AMER INST PHYSICS , 2006, Vol. 850, 1307-1308 p.Conference paper (Refereed)
Abstract [en]

The effect of high energy neutron irradiation and subsequent low temperature annealings of icosahedral AlPdRe has been studied. For an insulating sample, brought into a metallic state by irradiation, the resistivity rho, at 4.2 K was found to increase with increased annealing temperature T-a, while the resistance ratio R=rho(4.2 K)/rho(295 K) increased according to a previously established general relation for as prepared samples. The intensity of X-ray diffraction peaks were found to increase with increasing T-a, thus indicating improved icosahedral order. It is concluded that irradiation and annealing offers a method to reversibly tune a single icosahedral AlPdRe sample over a range of R-values, that R is therefore not sensitive to external impurities, and is a useful parameter to tune the metal-insulator transition.

Place, publisher, year, edition, pages
MELVILLE, NY: AMER INST PHYSICS , 2006. Vol. 850, 1307-1308 p.
Keyword [en]
AlPdRe quasicrystals, metal-insulator transition, neutron irradiation and annealing, electronic transport
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-42082DOI: 10.1063/1.2355187ISI: 000243396400596ISBN: 978-073540347-5OAI: diva2:446439
24th International Conference on Low Temperature Physics (LT24). Orlando, FL. AUG 10-17, 2005
QC 20111007Available from: 2011-10-07 Created: 2011-10-05 Last updated: 2011-10-07Bibliographically approved

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Rapp, Östen
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Microelectronics and Information Technology, IMIT
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