High current gain silicon carbide bipolar power transistors
2006 (English)In: Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, 2006, 141-144 p.Conference paper (Refereed)
Silicon carbide NPN bipolar junction transistors were fabricated and a current gain exceeding 60 was obtained for a BJT with a breakdown voltage BV(CEO)=1100 V. A reduction of the current gain was observed after contact annealing at 950 degrees C and this was attributed to degradation of the oxide passivation. Device simulations with varying emitter doping resulted in a maximum current gain for an emitter doping around 1(.)10(19) cm(-3). Resistive turn-off measurements were performed and a minimum collector-emitter voltage (V(CE)) rise-time of 40 ns was found. The VCE rise-time showed a clear dependence on the on-state base current thus indicating a significant stored charge.
Place, publisher, year, edition, pages
2006. 141-144 p.
, International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854
sificon carbide, bipolar junction transistor, current gain, surface recombination, bandgap narrowing
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-42224ISI: 000238922500039ScopusID: 2-s2.0-34247512143OAI: oai:DiVA.org:kth-42224DiVA: diva2:446531
18th International Symposium on Power Semiconductor Devices and ICs Location: Univ Naples Feder II, Naples, Italy, Date: JUN 04-08, 2006
QC 201110072011-10-072011-10-062011-10-07Bibliographically approved