Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High current gain silicon carbide bipolar power transistors
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-5845-3032
Show others and affiliations
2006 (English)In: Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, 2006, 141-144 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide NPN bipolar junction transistors were fabricated and a current gain exceeding 60 was obtained for a BJT with a breakdown voltage BV(CEO)=1100 V. A reduction of the current gain was observed after contact annealing at 950 degrees C and this was attributed to degradation of the oxide passivation. Device simulations with varying emitter doping resulted in a maximum current gain for an emitter doping around 1(.)10(19) cm(-3). Resistive turn-off measurements were performed and a minimum collector-emitter voltage (V(CE)) rise-time of 40 ns was found. The VCE rise-time showed a clear dependence on the on-state base current thus indicating a significant stored charge.

Place, publisher, year, edition, pages
2006. 141-144 p.
Series
International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854
Keyword [en]
sificon carbide, bipolar junction transistor, current gain, surface recombination, bandgap narrowing
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-42224ISI: 000238922500039Scopus ID: 2-s2.0-34247512143OAI: oai:DiVA.org:kth-42224DiVA: diva2:446531
Conference
18th International Symposium on Power Semiconductor Devices and ICs Location: Univ Naples Feder II, Naples, Italy, Date: JUN 04-08, 2006
Note
QC 20111007Available from: 2011-10-07 Created: 2011-10-06 Last updated: 2011-10-07Bibliographically approved

Open Access in DiVA

No full text

Scopus

Authority records BETA

Zetterling, Carl-Mikael

Search in DiVA

By author/editor
Domeij, MartinLee, Hyung-SeokZetterling, Carl-MikaelÖstling, Mikael
By organisation
Microelectronics and Applied Physics, MAP
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 25 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf