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Efficient and compact light-intensity modulators for high frequencies and high bitrates
KTH, School of Information and Communication Technology (ICT), Optics and Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.ORCID iD: 0000-0001-7056-4379
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
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2006 (English)In: ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 2, Proceedings: ESPC, NAON / [ed] Marciniak, M, 2006, 142-145 p.Conference paper, Published paper (Refereed)
Abstract [en]

Electroabsorption modulators (EAM) based on quantum-confined Stark effect (QCSE) in multiple-quantum wells (MQW) have been demonstrated to provide high-speed, low drive voltage, and high extinction ratio. They are compact in size and can be monolithically integrated with source lasers. In order to achieve both high speed and low drive-voltage operation, travelling-wave (TW) electrode structures can be used for EAMs. Modulation bandwidths of 100 GHz (-3 dBe) have been accomplished and transmission at 80 Gbit/s with non-return-to-zero (NRZ) code has been demonstrated for InP-based TWEAMs, indicating the possibility of reaching speeds of IOOGbit/s and beyond. In order to further increase the efficiency and reduce the drive voltage, MQW structures using intersubband (IS) instead of interband (QCSE) absorption are being investigated. Materials systems with large conduction band offset, such as GaN/Al(Ga)N or InGaAs/AlAsSb, are required for IS modulators. Critical for the performance of IS modulators is the linewidth of the absorption peak, hence IS modulators have the potential to outperform interband modulators given that a sufficiently high material quality can be achieved.

Place, publisher, year, edition, pages
2006. 142-145 p.
Keyword [en]
electroabsorption, modulator, traveling wave, intersubband absorption
National Category
Communication Systems
Identifiers
URN: urn:nbn:se:kth:diva-42188ISI: 000240400000038Scopus ID: 2-s2.0-34250639972ISBN: 1-4244-0235-2 (print)OAI: oai:DiVA.org:kth-42188DiVA: diva2:446923
Conference
8th International Conference on Transparent Optical Networks Location: Nottingham, England, Date: JUN 18-22, 2006
Note
QC 20111010Available from: 2011-10-10 Created: 2011-10-06 Last updated: 2011-10-10Bibliographically approved

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Westergren, Urban

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Westergren, UrbanYu, YichuanJänes, PeterHolmström, PetterThylén, Lars
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Optics and PhotonicsKista Photonics Research Center, KPRCMicroelectronics and Information Technology, IMITMicroelectronics and Applied Physics, MAP
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