Nanophotonic devices based on silicon-on-insulator nanowire waveguides
2006 (English)In: ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 1, Proceedings: ICTON, MPM, INDUSTRIAL, PICAW, GOWN / [ed] Marciniak, M, 2006, 206-209 p.Conference paper (Refereed)
While silica-on-silicon is recognized as one of the dominant platforms for microphotonics today, silicon-on-insulator nanowire waveguides appear to be the technology for next generation of super compact integrated devices. Due to very high refractive index contrast and strong light confinement in the core, the waveguide bend radius can be reduced to a few micrometers and the size reduction of the functional integrated circuits can reach several orders of magnitude. An array waveguide grating multi/demultiplexer that usually occupies several square centimetres in silica-on-silicon technology can be reduced to the size of 50 x 50 mu m(2). The performance of such miniaturized devices with submicrometer-size waveguides strongly depends on the fabrication accuracy: high resolution patterning and low roughness etching. High quality and high precision optimized processing is necessary to obtain satisfactory results. We discuss here the technology issues as well as present some fabricated devices based on silicon nanowire waveguides.
Place, publisher, year, edition, pages
2006. 206-209 p.
nanophotonics, silicon integration, planar ligthwave circuits, photonic integrated circuits, silicon on insulator, silicon wire waveguides
IdentifiersURN: urn:nbn:se:kth:diva-42187ISI: 000240399600054ScopusID: 2-s2.0-34250622314ISBN: 1-4244-0235-2OAI: oai:DiVA.org:kth-42187DiVA: diva2:446925
8th International Conference on Transparent Optical Networks Location: Nottingham, England, Date: JUN 18-22, 2006
QC 201110102011-10-102011-10-062011-10-10Bibliographically approved