Feature size effects in Ar/Cl-2 chemically assisted ion beam etching of InP-based protonic crystals
2006 (English)In: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, NEW YORK: IEEE , 2006, 341-344 p.Conference paper (Refereed)
This work addresses feature size effects (the lag-effect and roughness development) in chemically assisted ion beam etching (CAIBE) etching of InP-based photonic crystals. Photonic crystal fields The slope of the etch,with varying hole size and periods were etched with different etching times. depth versus diameter cures (lag-curves) reveals an aspect ratio dependence, with an etch limiting aspect ratio of the order of 25. A model of the etch rate specific to Ar/Cl-2 CAIBE is proposed. We calculate the etch rate using a physico-chemical model which takes in to account the effect of Ar-ion sputtering and surface chemical reactions. lit addition, it combines the aspect ratio dependence of the gas conductance of the etched holes. Finally, the bottom roughness of the etched holes is examined; its origin and evolution are discussed.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2006. 341-344 p.
photonic crystals, transmission
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-42424DOI: 10.1109/ICIPRM.2006.1634185ISI: 000244480500090ISBN: 978-0-7803-9557-2OAI: oai:DiVA.org:kth-42424DiVA: diva2:447188
12th International Conference on Indium Phosphide and Related Materials. Princeton Univ, Princeton, NJ. MAY 07-11, 2006
QC 201110112011-10-112011-10-102011-10-11Bibliographically approved