Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials
2005 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 17, no 22, S2315-S2322 p.Article in journal (Refereed) Published
The application of high-resolution x-ray diffraction for detecting and distinguishing defects in SiGe(C) layers is presented. A depth profile of the defects in SiGe/Si multilayers has been performed by using high-resolution reciprocal lattice mapping at different asymmetric reflections. Transmission electron microscopy was also applied in order to observe defects in the layers and these results were linked with the x-ray analysis. The substitutional C or B concentration in SiGe was measured by the shift of layer peak compared to the intrinsic layers. The thermal stability of the SiGe layers was investigated in order to rank the epitaxial quality of the SiGe below the detection limit of x-ray technique. It has also been demonstrated that x-ray analysis can be used for in-line process monitoring of layers grown in small device openings on patterned substrates. These types of analysis have also been used routinely for the evaluation of processed samples.
Place, publisher, year, edition, pages
2005. Vol. 17, no 22, S2315-S2322 p.
IdentifiersURN: urn:nbn:se:kth:diva-42549DOI: 10.1088/0953-8984/17/22/020ISI: 000230663100021ScopusID: 2-s2.0-21044456610OAI: oai:DiVA.org:kth-42549DiVA: diva2:447331
QC 201110112011-10-112011-10-112011-10-11Bibliographically approved