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Fabrication of 100 nm gate length MOSFET's using a novel carbon nanotube-based nano-lithography
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2005 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 124, 354-358 p.Article in journal (Refereed) Published
Abstract [en]

PECVD-grown carbon nanotubes on (100)silicon substrates have been studied and exploited for electron emission applications. After the growth of vertical CNT's [Y. Abdi, J. Koohsorkhi, J. Derakhshandeh, S. Mohajerzadeh, H. Hosseinzadegan, M.D. Robertson, C. Benet, EMRS Spring Meeting, Strasbourg, France, May 2005] the grown nanotubes are encapsulated by means of an insulating TiO(2) layer, leading to beam-shape emission of electrons from the cathode towards the opposite anode electrode. The electron emission occurs using an anode-cathode voltage of 100 V with ability of direct writing on a photo-resist-coated substrates. Straight lines with widths between 50 and 200 nm have been successfully drawn. This technique has been applied on P-type (100)silicon substrates for the formation of the gate of N-MOSFET devices. The successful realization of MOSFET devices indicates its usefulness for applications in nano-electronic devices. This device has inversion Cox exceeding 0.7 mu F/cm(2), drive current equal to 3 10 mu A/mu m.

Place, publisher, year, edition, pages
2005. Vol. 124, 354-358 p.
Keyword [en]
carbon nanotube, PECVD, vertical growth, electron emission, lithography, MOSFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-42492DOI: 10.1016/j.mseb.2005.08.126ISI: 000233895800071Scopus ID: 2-s2.0-27844517777OAI: oai:DiVA.org:kth-42492DiVA: diva2:447522
Note
QC 20111012Available from: 2011-10-12 Created: 2011-10-11 Last updated: 2017-12-08Bibliographically approved

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