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Influence of gamma-ray and neutron irradiation on injection characteristics of 4H-SiC pn structures
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] ipoti, R; Poggi, A; Scorzoni, A, 2005, Vol. 483, 993-996 p.Conference paper (Refereed)
Abstract [en]

The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x10(6) rad) and 1 MeV neutrons in the doses range from 1.2x10(14) cm(-2) to 6.24x10(14) cm(-2). Neutron irradiation with a dose 1.2x10(14) cm(-2) increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hv(max) ≈ 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x10(14) cm(-2)) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.

Place, publisher, year, edition, pages
2005. Vol. 483, 993-996 p.
Keyword [en]
gamma-ray and neutron irradiation, recombination, lifetime, 4H-SiC
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-42682ISI: 000228549600237ScopusID: 2-s2.0-33750364010ISBN: 0-87849-963-6OAI: diva2:447531
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004

QC 20111012

Available from: 2011-10-12 Created: 2011-10-11 Last updated: 2013-04-09Bibliographically approved

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