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Current gain of 4H-SiC bipolar transistors including the effect of interface states
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
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2005 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 483, 889-892 p.Article in journal (Refereed) Published
Abstract [en]

The current gain (β) of 4H-SiC BJTs as function of collector current (I-C) has been investigated by DC and pulsed measurements and by device simulations. A measured monotonic increase of β with I-C agrees well with simulations using a constant distribution of interface states at the 4H-SiC/SiO2 interface along the etched side-wall of the base-emitter junction. Simulations using only bulk recombination, on the other hand, are in poor agreement with the measurements. The interface states degrade the simulated current gain by combined effects of localized recombination and trapped charge that influence the surface potential. Additionally, bandgap narrowing has a significant impact by reducing the peak current gain by about 50% in simulations.

Place, publisher, year, edition, pages
ZURICH-UETIKON: Trans Tech Publications Inc., 2005. Vol. 483, 889-892 p.
Keyword [en]
bipolar junction transistor, current gain, interface states, device simulation
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-42679ISI: 000228549600211Scopus ID: 2-s2.0-27144447739ISBN: 0-87849-963-6 (print)OAI: oai:DiVA.org:kth-42679DiVA: diva2:447535
Conference
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
Note
QC 20111012Available from: 2011-10-12 Created: 2011-10-11 Last updated: 2017-12-08Bibliographically approved

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Zetterling, Carl-Mikael

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