Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC
2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti, R; Poggi, A; Scorzoni, A, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005, Vol. 483, 365-368 p.Conference paper (Refereed)
Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (E-c) have been detected.
Place, publisher, year, edition, pages
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005. Vol. 483, 365-368 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
DLTS, electron irradiation
IdentifiersURN: urn:nbn:se:kth:diva-42675ISI: 000228549600085ScopusID: 2-s2.0-33750300863ISBN: 0-87849-963-6OAI: oai:DiVA.org:kth-42675DiVA: diva2:447537
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
QC 201110122011-10-122011-10-112011-10-12Bibliographically approved