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Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-0292-224X
2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti, R; Poggi, A; Scorzoni, A, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005, Vol. 483, 365-368 p.Conference paper, Published paper (Refereed)
Abstract [en]

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (E-c) have been detected.

Place, publisher, year, edition, pages
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005. Vol. 483, 365-368 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
Keyword [en]
DLTS, electron irradiation
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-42675ISI: 000228549600085Scopus ID: 2-s2.0-33750300863ISBN: 0-87849-963-6 (print)OAI: oai:DiVA.org:kth-42675DiVA: diva2:447537
Conference
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
Note
QC 20111012Available from: 2011-10-12 Created: 2011-10-11 Last updated: 2011-10-12Bibliographically approved

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Linnarsson, Margareta K.

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CiteExportLink to record
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