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Comparative study of 4H-SiC irradiated with neutrons and heavy ions
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2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti, R; Poggi, A; Scorzoni, A, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005, Vol. 483, 377-380 p.Conference paper, Published paper (Refereed)
Abstract [en]

The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p(+)-n-n(+) diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/mn, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.

Place, publisher, year, edition, pages
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005. Vol. 483, 377-380 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
Keyword [en]
SiC, irradiation, neutrons, bismuth, krypton, luminescence, defects, deep level
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-42676ISI: 000228549600088Scopus ID: 2-s2.0-33750379607ISBN: 0-87849-963-6 (print)OAI: oai:DiVA.org:kth-42676DiVA: diva2:447544
Conference
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
Note
QC 20111012Available from: 2011-10-12 Created: 2011-10-11 Last updated: 2011-10-12Bibliographically approved

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Hallén, Anders

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  • apa
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