Comparative study of 4H-SiC irradiated with neutrons and heavy ions
2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti, R; Poggi, A; Scorzoni, A, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005, Vol. 483, 377-380 p.Conference paper (Refereed)
The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p(+)-n-n(+) diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/mn, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.
Place, publisher, year, edition, pages
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005. Vol. 483, 377-380 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
SiC, irradiation, neutrons, bismuth, krypton, luminescence, defects, deep level
IdentifiersURN: urn:nbn:se:kth:diva-42676ISI: 000228549600088ScopusID: 2-s2.0-33750379607ISBN: 0-87849-963-6OAI: oai:DiVA.org:kth-42676DiVA: diva2:447544
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
QC 201110122011-10-122011-10-112011-10-12Bibliographically approved