Investigation of stacking fault formation in hydrogen bombarded 4H-SiC
2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti, R; Poggi, A; Scorzoni, A, 2005, Vol. 483, 327-330 p.Conference paper (Refereed)
The effects of hydrogen and proton irradiation on stacking fault formation in 4H-SiC are investigated by an optical pump-probe method of imaging spectroscopy. We report optically stimulated nucleation and expansion of stacking faults (SFs) in 0.6 keV H-2(+) implanted n-/n+ and p+/n-/n+ structures. The activation enthalpy for recombination enhanced dislocation glide (REDG) in hydrogenated samples (&SIM; 0.25 eV) is found to be similar to that in a virgin material. Our results indicate that SFs mainly nucleate at the internal n-/n+ interface, beyond reach of hydrogen, thus justifying minor SF passivation effect. No REDG could be initiated optically in 2.5 MeV proton irradiated samples due to radiation defects providing alternative recombination channels to bypass the REDG mechanism. The radiation damage was verified by DLTS, revealing several new levels below E-C in the range 0.4-0.80 eV, and by PL, showing the onset of D-center related luminescence band and concurrent increase of the nonradiative recombination rate.
Place, publisher, year, edition, pages
2005. Vol. 483, 327-330 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
stacking fault, ion implantation, photoluminescence, imaging spectroscopy, DLTS
IdentifiersURN: urn:nbn:se:kth:diva-42674ISI: 000228549600077ScopusID: 2-s2.0-34547226385ISBN: 0-87849-963-6OAI: oai:DiVA.org:kth-42674DiVA: diva2:447548
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
QC 201110122011-10-122011-10-112012-03-23Bibliographically approved