High energy resolution detectors based on 4H-SiC
2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti, R; Poggi, A; Scorzoni, A, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LT , 2005, Vol. 483, 1029-1032 p.Conference paper (Refereed)
The spectrometric characteristics of the detectors based on 4H-SiC using 4.8-7.7 MeV a-particles were determined. The Cr Schottky barriers with areas of 1x10(-2) cm(2) were performed by vacuum thermal evaporation on 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) with thickness 26 and 50 μ m. The concentrations of the uncompensated donors into CVD epitaxial layers were (6-10) x10(14) cm(-3), that allowed to develop a detector depletion region up to 30 μ m using reverse bias of 400 V. The energy resolution less than 20 keV (0.34%) for lines of 5.0-5.5 MeV was achieved that is twice as large of the resolution of high-precision Si-based detectors prepared on specialized technology. The maximum signal amplitude of 4H-SiC - detectors corresponding to the average electron-hole pair generation energy was found to be 7.70 eV.
Place, publisher, year, edition, pages
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LT , 2005. Vol. 483, 1029-1032 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
SiC, detector, irradiation, alpha-particles, isotopes, charge collection, energy resolution
IdentifiersURN: urn:nbn:se:kth:diva-42673DOI: 10.4028/www.scientific.net/MSF.483-485.1029ISI: 000228549600245ScopusID: 2-s2.0-29144494363ISBN: 0-87849-963-6OAI: oai:DiVA.org:kth-42673DiVA: diva2:447551
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
QC 201110122011-10-122011-10-112013-02-25Bibliographically approved