Comparison of Commutation Transients of Inverters with Silicon Carbide JFETs with and without Body Diodes
2004 (English)In: Proceedings of the Nordic Workshop on Power and Industrial Electronics (NORpie), 2004Conference paper (Refereed)
An inverter could be built by using silcon carbide power switches only. This can be done by using SiC JFETs which can conduct current in both directions. An interesting question is how an inverter using SiC JFETs with a body diode compares with an inverter using SiC JFETs without body diodes. This will be discussed in this paper.
Place, publisher, year, edition, pages
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-42840OAI: oai:DiVA.org:kth-42840DiVA: diva2:447642
QC 201110212011-10-122011-10-122011-10-21Bibliographically approved