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Comparison of Commutation Transients of Inverters with Silicon Carbide JFETs with and without Body Diodes
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.ORCID iD: 0000-0002-1755-1365
2004 (English)In: Proceedings of the Nordic Workshop on Power and Industrial Electronics (NORpie), 2004Conference paper, Published paper (Refereed)
Abstract [en]

An inverter could be built by using silcon carbide power switches only. This can be done by using SiC JFETs which can conduct current in both directions. An interesting question is how an inverter using SiC JFETs with a body diode compares with an inverter using SiC JFETs without body diodes. This will be discussed in this paper.

Place, publisher, year, edition, pages
2004.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-42840OAI: oai:DiVA.org:kth-42840DiVA: diva2:447642
Conference
NORpie
Note
QC 20111021Available from: 2011-10-12 Created: 2011-10-12 Last updated: 2011-10-21Bibliographically approved

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Nee, Hans-Peter

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