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On the choice of blanking times at turn-on and turn-off for the diode-less SiC JFET inverter bridge
KTH, Superseded Departments, Electrical Systems.
KTH, Superseded Departments, Electrical Systems.ORCID iD: 0000-0002-1755-1365
2001 (English)In: Proceedings of the European Conference on Power Electronics and Applications (EPE) 2001, 2001Conference paper, Published paper (Refereed)
Abstract [en]

This article desccribes the choice of blanking times at turn-on and turn-off for the diode-less SiC JFET inverter bridge. It is also discussed if auxiliary capacitors should be used or not and which capacitance should be used in different cases.

Place, publisher, year, edition, pages
2001.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-42844OAI: oai:DiVA.org:kth-42844DiVA: diva2:447648
Conference
EPE 2001
Note
QC 20111109Available from: 2011-10-12 Created: 2011-10-12 Last updated: 2011-11-09Bibliographically approved

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Nee, Hans-Peter

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