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Non-volatile giant resistance switching in metal-insulator-manganite junctions
KTH, School of Engineering Sciences (SCI), Theoretical Physics, Condensed Matter Theory.
KTH, School of Engineering Sciences (SCI), Theoretical Physics, Condensed Matter Theory.ORCID iD: 0000-0001-8774-9302
KTH, School of Engineering Sciences (SCI), Theoretical Physics, Condensed Matter Theory.
2005 (English)In: Materials and Processes for Nonvolatile Memories / [ed] Claverie, A; Tsoukalas, D; King, TJ; Slaughter, JM, WARRENDALE: MATERIALS RESEARCH SOCIETY , 2005, Vol. 830, 379-384 p.Conference paper, Published paper (Refereed)
Abstract [en]

Heteroepitaxial CeO2(80nm)/L0.67Ca0.33MnO3(400nm) film structures have been pulsed laser deposited on LaAlO3(001) single crystals to fabricate two terminal resistance switching devices. Ag/CeO2/L0.67Ca0.33MnO3 junctions exhibit reproducible switching between a high resistance state (FIRS) with insulating properties and a semiconducting or metallic low resistance state (LRS) with resistance ratios up to 10(5). Reversible electrical switching is a polar effect achievable both in continuous sweeping mode and in the pulse regime.

Place, publisher, year, edition, pages
WARRENDALE: MATERIALS RESEARCH SOCIETY , 2005. Vol. 830, 379-384 p.
Series
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN 0272-9172 ; 830
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-43000ISI: 000228724300052Scopus ID: 2-s2.0-20344407542ISBN: 1-55899-778-4 (print)OAI: oai:DiVA.org:kth-43000DiVA: diva2:447752
Conference
Symposium on Materials and Processes for Nonvolatile Memories held at the 2004 MRS Fall Meeting. Boston, MA. NOV 30-DEC 02, 2004
Note

QC 20111013

Available from: 2011-10-13 Created: 2011-10-13 Last updated: 2016-12-21Bibliographically approved

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Khartsev, Sergiy

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