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Spin relaxation in charged InAs/GaAs quantum dots
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
2005 (English)In: COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS / [ed] Woo, JC; Hasegawa, H; Kwon, YS; Yao, T; Yoo, KH, 2005, Vol. 184, 443-446 p.Conference paper, Published paper (Refereed)
Abstract [en]

Photoexcited electron and hole spin relaxation has been studied in modulation doped InAs/GaAs self-assembled quantum dots by means of time resolved photoluminescence. The electron spin relaxation times of 50 to 70 ps have been found for the undoped and p-doped samples, while the hole spins randomise on a much shorter time scale. Electrons preserve their spin orientation during capture and relaxation for excitation into the barriers, however, no preferential spin polarisation has been detected for carrier excitation directly into the dots.

Place, publisher, year, edition, pages
2005. Vol. 184, 443-446 p.
Series
Institute of Physics Conference Series, ISSN 0951-3248 ; 184
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-42759ISI: 000229928100096Scopus ID: 2-s2.0-33644500751ISBN: 0-7503-1017-0 (print)OAI: oai:DiVA.org:kth-42759DiVA: diva2:447839
Conference
31st International Symposium on Compound Semiconductors Location: Seoul Natl Univ, Hoam Convent Ctr, Seoul, SOUTH KOREA Date: SEP 12-16, 2004
Note
QC 20111013Available from: 2011-10-13 Created: 2011-10-12 Last updated: 2011-11-30Bibliographically approved

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Marcinkevicius, Saulius

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