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Synthesis and characterization InP and Ga(2)O(3) nanowires
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
2005 (English)In: SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES / [ed] Zah, CE; Lou, Y; Tsuji, S, 2005, Vol. 5624, 378-386 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on the synthesis and characterization of crystalline InP and Ga(2)O(3) nanowires. The nanowires are synthesized using a simple method based on vapor-liquid-solid (VLS) growth; a method we believe could form the basis of cheap and simple fabrication of crystalline nanowires of a broad range of semiconductor materials, including III-IV compounds and semiconductor oxides. The reported InP nanowires have an average diameter of 30nm and the Ga(2)O(3) nanowires diameters down to 100nm. Characterization data including SEM, XRD, TEM and PL are presented.

Place, publisher, year, edition, pages
2005. Vol. 5624, 378-386 p.
Series
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 5624
Keyword [en]
crystalline nanowires, InP, Ga(2)O(3), vapor-liquid-solid (VLS) growth
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-43203DOI: 10.1117/12.581371ISI: 000227356100048Scopus ID: 2-s2.0-17644424011OAI: oai:DiVA.org:kth-43203DiVA: diva2:447841
Conference
Conference on Semiconductor and Organic Optoelectronic Materials and Devices. Beijing, PEOPLES R CHINA. NOV 09-11, 2004
Note

QC 20111013

Available from: 2011-10-13 Created: 2011-10-13 Last updated: 2016-12-21Bibliographically approved

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Han, ZhanghuaWang, FeiForsberg, ErikCao, Xia
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