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Strong enhancement of Rashba effect in strained p-type quantum wells
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2005 (English)In: Physics of Semiconductors, Pts A and B / [ed] Menendez, J; VanDeWalle, CG, MELVILLE: AMER INST PHYSICS , 2005, Vol. 772, 1423-1424 p.Conference paper, Published paper (Refereed)
Abstract [en]

One of the most studied spintronic devices is the spin transistor proposed by Datta and Das. The mechanism behind this transistor is the Rashba effect: The inversion asymmetry caused by the gate voltage gives rise to a spin splitting. We show that the relevant spin splitting in k-space is typically two orders of magnitude larger in unstrained p-type quantum wells compared to n-type quantum wells. We also show that further order-of-magnitude improvement can be obtained by utilizing the frequently ignored lattice-mismatch between GaAs and AlGaAs.

Place, publisher, year, edition, pages
MELVILLE: AMER INST PHYSICS , 2005. Vol. 772, 1423-1424 p.
Series
AIP CONFERENCE PROCEEDINGS, ISSN 0094-243X ; 772
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-43191DOI: 10.1063/1.1994649ISI: 000230723900663Scopus ID: 2-s2.0-33749458459ISBN: 0-7354-0257-4 (print)OAI: oai:DiVA.org:kth-43191DiVA: diva2:448057
Conference
27th International Conference on the Physics of Semiconductors (ICPS-27). Flagstaff, AZ. JUL 26-30, 2004
Note
QC 20111014Available from: 2011-10-14 Created: 2011-10-13 Last updated: 2011-10-14Bibliographically approved

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