Strong enhancement of Rashba effect in strained p-type quantum wells
2005 (English)In: Physics of Semiconductors, Pts A and B / [ed] Menendez, J; VanDeWalle, CG, MELVILLE: AMER INST PHYSICS , 2005, Vol. 772, 1423-1424 p.Conference paper (Refereed)
One of the most studied spintronic devices is the spin transistor proposed by Datta and Das. The mechanism behind this transistor is the Rashba effect: The inversion asymmetry caused by the gate voltage gives rise to a spin splitting. We show that the relevant spin splitting in k-space is typically two orders of magnitude larger in unstrained p-type quantum wells compared to n-type quantum wells. We also show that further order-of-magnitude improvement can be obtained by utilizing the frequently ignored lattice-mismatch between GaAs and AlGaAs.
Place, publisher, year, edition, pages
MELVILLE: AMER INST PHYSICS , 2005. Vol. 772, 1423-1424 p.
, AIP CONFERENCE PROCEEDINGS, ISSN 0094-243X ; 772
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-43191DOI: 10.1063/1.1994649ISI: 000230723900663ScopusID: 2-s2.0-33749458459ISBN: 0-7354-0257-4OAI: oai:DiVA.org:kth-43191DiVA: diva2:448057
27th International Conference on the Physics of Semiconductors (ICPS-27). Flagstaff, AZ. JUL 26-30, 2004
QC 201110142011-10-142011-10-132011-10-14Bibliographically approved