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InP-based two dimensional photonic crystals: A material and processing perspective
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2008 (English)In: ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2 / [ed] Marciniak, M, NEW YORK: IEEE , 2008, 25-25 p.Conference paper, Published paper (Refereed)
Abstract [en]

The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall Surface potential will be demonstrated.

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2008. 25-25 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-38662DOI: 10.1109/ICTON.2008.4598579ISI: 000259480300008ISBN: 978-1-4244-2625-6 (print)OAI: oai:DiVA.org:kth-38662DiVA: diva2:448105
Conference
10th International Conference on Transparent Optical Networks, Athens, GREECE, JUN 22-26, 2008
Note
QC 20111014Available from: 2011-10-14 Created: 2011-08-31 Last updated: 2012-01-27Bibliographically approved

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