InP-based two dimensional photonic crystals: A material and processing perspective
2008 (English)In: ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2 / [ed] Marciniak, M, NEW YORK: IEEE , 2008, 25-25 p.Conference paper (Refereed)
The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall Surface potential will be demonstrated.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2008. 25-25 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-38662DOI: 10.1109/ICTON.2008.4598579ISI: 000259480300008ISBN: 978-1-4244-2625-6OAI: oai:DiVA.org:kth-38662DiVA: diva2:448105
10th International Conference on Transparent Optical Networks, Athens, GREECE, JUN 22-26, 2008
QC 201110142011-10-142011-08-312012-01-27Bibliographically approved