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Ion beam synthesis of silicon carbide
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2005 (English)In: PARTICLE BEAMS & PLASMA INTERACTION ON MATERIALS AND ION & PLASMA SURFACE FINISHING 2004 / [ed] Vilaithong, T; Boonyawan, D; Thongbai, C, 2005, Vol. 107, 51-54 p.Conference paper (Refereed)
Abstract [en]

Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (100) high-purity p-type silicon substrate at roorn temperature and 400 degrees C, respectively, using doses in excess of 10(17) ions/cm(2). Elastic recoil detection analysis (ERDA) technique, developed for routine atomic depth profiling at the Angstrom laboratory, Uppsala University, Sweden, was used to investigate the depth distributions of implanted-ions. Infrared transmittance measurement was used as an indication of SiC in the implanted Si substrate. For the samples implanted at high temperature, the results show the existence of a peak at 797 cm(-1), indicating the presence of beta-SiC, already directly formed during the implantation without post-implantation annealing. While for the samples implanted at room temperature, starting with the band of amorphous Si-C network, the crystalline SiC appears at the annealing temperature as low as 900 degrees C. In both cases, during further annealing in vacuum, the peak grows in height and narrows in width (according to the measured FWHM) with increasing annealing temperature, indicating a further growth of the SiC layer. However, for thermal annealing at 1000 T in a vacuum furnace the SiC crystallization was not completed and crystal imperfection where still present. Complementary to IR, Raman scattering measurements were performed. Although no direct evidence of SiC vibrations were observed, the appearance and disappearance of both Si-Si and C-C related bands points out to the formation of silicon and carbon clusters in the implanted layer.

Place, publisher, year, edition, pages
2005. Vol. 107, 51-54 p.
Keyword [en]
ion beam synthesis (1BS), elastic recoil detection analysis (ERDA), silicon, silicon carbide (SiC), infrared spectroscopy, Raman spectroscopy
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-43271ISI: 000233133800011ScopusID: 2-s2.0-24944434772ISBN: 3-908451-12-4OAI: diva2:448724
PIM/ASIP 2004 Meeting Location: Chiang Mai, THAILAND Date: NOV 25-27, 2004
QC 20111018Available from: 2011-10-18 Created: 2011-10-14 Last updated: 2011-10-18Bibliographically approved

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