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Recessed and epitaxially regrown SiGe(B) source/drain junctions with Ni salicide contacts
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2004 (English)In: Silicon Front-End Junction Formation-Physics And Technology / [ed] Pichler, P; Claverie, A; Lindsay, R; Orlowski, M; Windl, W, 2004, Vol. 810, 49-54 p.Conference paper, Published paper (Refereed)
Abstract [en]

Integration issues concerning recessed epitaxial SiGe(B) source/drain junctions formed by selective Si etching followed by selective epitaxial growth of in situ heavily B-doped Si1-xGex are presented. The concept is beneficial compared to conventional ion implanted junctions, since dopant activation above the solid solubility in Si can be obtained. When integrated in the PMOS process flow, the resulting Si1-xGex layer is very rough. Several possible causes for low quality epitaxy are discussed and improvements are proposed. It is suggested that the dopant type and/or concentration in the silicon substrate can have an effect on the process.

Place, publisher, year, edition, pages
2004. Vol. 810, 49-54 p.
Series
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 810
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-43822ISI: 000224411300006Scopus ID: 2-s2.0-5544277009ISBN: 1-55899-760-1 (print)OAI: oai:DiVA.org:kth-43822DiVA: diva2:448857
Conference
Symposium on Silicon Front-End Junction Formation-Physics and Technology held at the 2004 MRS Spring Meeting Location: San Francisco, CA Date: APR 13-15, 2004
Note
QC 20111018Available from: 2011-10-18 Created: 2011-10-18 Last updated: 2011-10-31Bibliographically approved

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Hellström, Per-Erik

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