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Epitaxial La-0.67(Sr,Ca)(0.33)MnO3 films on Si for IR bolometer applications
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Integration Of Advanced Micro-And Nanoelectronic Devices-Critical Issues And Solutions / [ed] Morais, J; Kumar, D; Houssa, M; Singh, RK; Landheer, D; Ramesh, R; Wallace, RM; Guha, S; Koinuma, H, 2004, Vol. 811, 405-410 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on processing and properties of La-0.67(Sr,Ca)(0.33)MnO3 (LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the "diagonal-on-side" manner onto the Bi4Ti3O12 (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO2/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4%K-1 and colossal magnetoresistance (CMR) Deltarho/rho similar to 2.9%kOe(-1) @ 294K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axis orientation of layers: full widths at half-maximum (FWHM) 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields noise equivalent temperature difference (NETD) as low as 1.2 muK/rootHz @ 30Hz and 294K.

Place, publisher, year, edition, pages
2004. Vol. 811, 405-410 p.
Series
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 811
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-43821ISI: 000224411400060Scopus ID: 2-s2.0-12744259367ISBN: 1-55899-761-X (print)OAI: oai:DiVA.org:kth-43821DiVA: diva2:448884
Conference
Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting Location: San Francisco, CA Date: APR 13-16, 2004
Note
QC 20111018Available from: 2011-10-18 Created: 2011-10-18 Last updated: 2011-10-31Bibliographically approved

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Khartsev, Sergiy

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