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Comparison of sol-gel derived and pulsed laser deposited epitaxial La0.67Ca0.33MnO3 films for IR bolometer
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Integration Of Advanced Micro-And Nanoelectronic Devices-Critical Issues And Solutions / [ed] Morais, J; Kumar, D; Houssa, M; Singh, RK; Landheer, D; Ramesh, R; Wallace, RM; Guha, S; Koinuma, H, 2004, Vol. 811, 379-384 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial La0.67Ca0.33MnO3 films have been prepared on LaAlO3 crystals by pulsed laser deposition (PLD) and by a novel all-alkoxide sol-gel technique. Different out-of-plane lattice parameters are found for the as-prepared films, and scanning electron microscopy shows a more porous structure for sol-gel films as compared to PLD films. These differences are largely removed by post-annealing at 1000 degreesC. Transport measurements show maximum temperature coefficient of resistivity of 8.2 % K-1 at 258 K (PLD) and 6.1% K-1 at 241 K (sol-gel) and colossal magnetoresistance at 7 kOe of 35% at 263 K (PLD) and 32% at 246 K (sol-gel).

Place, publisher, year, edition, pages
2004. Vol. 811, 379-384 p.
Series
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 811
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-43820ISI: 000224411400056Scopus ID: 2-s2.0-12744250322ISBN: 1-55899-761-X (print)OAI: oai:DiVA.org:kth-43820DiVA: diva2:448887
Conference
Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting Location: San Francisco, CA Date: APR 13-16, 2004
Note
QC 20111018Available from: 2011-10-18 Created: 2011-10-18 Last updated: 2011-10-31Bibliographically approved

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Khartsev, Sergey

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