Influence of self heating in a BiCMOS on SOI technology
2004 (English)In: ESSCIRC 2004: Proceedings of the 34th European Solid-State Device Research Conference, NEW YORK: IEEE , 2004, 337-340 p.Conference paper (Refereed)
Self heating in a 0.25mum BiCMOS technology with different isolation structures is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2-D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2004. 337-340 p.
Aspect ratio, Capacitance, Computer simulation, Heat resistance, Heating, Metallizing, Polysilicon, Silicon on insulator technology
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-44011DOI: 10.1109/ESSDER.2004.1356558ISI: 000225486100077ScopusID: 2-s2.0-17644412931ISBN: 0780384784OAI: oai:DiVA.org:kth-44011DiVA: diva2:449075
ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference; Leuven; 21 September 2004 through 23 September 2004
QC 201110192011-10-192011-10-192011-10-19Bibliographically approved