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Influence of self heating in a BiCMOS on SOI technology
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2004 (English)In: ESSCIRC 2004: Proceedings of the 34th European Solid-State Device Research Conference, NEW YORK: IEEE , 2004, 337-340 p.Conference paper, Published paper (Refereed)
Abstract [en]

Self heating in a 0.25mum BiCMOS technology with different isolation structures is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2-D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2004. 337-340 p.
Keyword [en]
Aspect ratio, Capacitance, Computer simulation, Heat resistance, Heating, Metallizing, Polysilicon, Silicon on insulator technology
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44011DOI: 10.1109/ESSDER.2004.1356558ISI: 000225486100077Scopus ID: 2-s2.0-17644412931ISBN: 0780384784 (print)OAI: oai:DiVA.org:kth-44011DiVA: diva2:449075
Conference
ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference; Leuven; 21 September 2004 through 23 September 2004
Note
QC 20111019Available from: 2011-10-19 Created: 2011-10-19 Last updated: 2011-10-19Bibliographically approved

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Malm, B. Gunnar

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