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Boron diffusion in intrinsic, n-type and p-type 4H-SiC
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 / [ed] Madar, R; Camassel, J, 2004, Vol. 457-460, 917-920 p.Conference paper, Published paper (Refereed)
Abstract [en]

The diffusion of boron in 4H-SiC has been studied by secondary ion mass spectrometry. Three kinds of epitaxial layers have been used, highly p-type, highly n-type and low doped n-type (intrinsic). A boron diffusion source has been introduced in the samples by ion implantation. Subsequent anneals have been carried out in Ar atmosphere in a RF-heated furnace between 1220degreesC and 2000degreesC for 5 min to 3 h. For the boron diffusion in the highly p-doped layer, 4x10(19) Al atoms/cm(3) an activation energy of 5.3 eV has been determined. A similar activation energy has been extracted in the highly n-doped layer, 1x10(19) N atoms/cm(3), although the absolute diffusivity values differ by four orders of magnitude. In the lightly n-doped layer, transient enhanced boron diffusion is observed at intrinsic conditions.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 917-920 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 457-460
Keyword [en]
boron, 4H-SiC, diffusion, SIMS
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-44401ISI: 000222802200218Scopus ID: 2-s2.0-8744282778OAI: oai:DiVA.org:kth-44401DiVA: diva2:450406
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) Location: Lyon, FRANCE Date: OCT 05-10, 2003
Note
QC 20111020Available from: 2011-10-20 Created: 2011-10-20 Last updated: 2011-10-20Bibliographically approved

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Linnarsson, Margareta K.

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